by E. Petrakakis, G. D. Tsibidis and E. Stratakis
Abstract:
We present a theoretical investigation of the ultrafast processes and dynamics of the produced excited carriers upon irradiation of silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The evolution of the carrier density and thermal response of the electron-hole and lattice subsystems are analyzed for various wavelengths λL in the range between 2.2 and 3.3 μm, where the influence of two- and three-photon absorption mechanisms is explored. The role of induced Kerr effect is highlighted and it manifests a more pronounced influence at smaller wavelengths in the mid-IR range. Elaboration on the conditions that lead to surface plasmon (SP) excitation indicate the formation of weakly bound SP waves on the material surface. The lifetime of the excited SP is shown to rise upon increasing wavelength, yielding a larger one than that predicted for higher laser frequencies. The calculation of damage thresholds for various pulse durations τp shows that they rise according to a power law (∼τζ(λL)p) where the increasing rate is determined by the exponent ζ(λL). Investigation of the multiphoton absorption rates and impact ionization contribution at different τp manifests a lower damage for λL=2.5μm compared to that for λL=2.2μm for long τp.
Reference:
E. Petrakakis, G. D. Tsibidis and E. Stratakis, “Modelling of the ultrafast dynamics and surface plasmon properties of silicon upon irradiation with mid-IR femtosecond laser pulses”, In Physical Review B, vol. 99, no. 19, pp. 195201, 2019.
Bibtex Entry:
@article{petrakakis_modelling_2019,
	title = {Modelling of the ultrafast dynamics and surface plasmon properties of silicon upon irradiation with mid-{IR} femtosecond laser pulses},
	volume = {99},
	url = {https://link.aps.org/doi/10.1103/PhysRevB.99.195201},
	doi = {10.1103/PhysRevB.99.195201},
	abstract = {We present a theoretical investigation of the ultrafast processes and dynamics of the produced excited carriers upon irradiation of silicon with femtosecond pulsed lasers in the mid-infrared (mid-IR) spectral region. The evolution of the carrier density and thermal response of the electron-hole and lattice subsystems are analyzed for various wavelengths λL in the range between 2.2 and 3.3 μm, where the influence of two- and three-photon absorption mechanisms is explored. The role of induced Kerr effect is highlighted and it manifests a more pronounced influence at smaller wavelengths in the mid-IR range. Elaboration on the conditions that lead to surface plasmon (SP) excitation indicate the formation of weakly bound SP waves on the material surface. The lifetime of the excited SP is shown to rise upon increasing wavelength, yielding a larger one than that predicted for higher laser frequencies. The calculation of damage thresholds for various pulse durations τp shows that they rise according to a power law (∼τζ(λL)p) where the increasing rate is determined by the exponent ζ(λL). Investigation of the multiphoton absorption rates and impact ionization contribution at different τp manifests a lower damage for λL=2.5μm compared to that for λL=2.2μm for long τp.},
	number = {19},
	urldate = {2021-01-18},
	journal = {Physical Review B},
	author = {Petrakakis, E. and Tsibidis, G. D. and Stratakis, E.},
	month = may,
	year = {2019},
	note = {Publisher: American Physical Society},
	pages = {195201},
	file = {APS Snapshot:C:\Users\abm50\Zotero\storage\UHHDQAN7\PhysRevB.99.html:text/html;Versión enviada:C:\Users\abm50\Zotero\storage\Q8SBDH4S\Petrakakis et al. - 2019 - Modelling of the ultrafast dynamics and surface pl.pdf:application/pdf}
}