by G. D. Tsibidis, L. Mouchliadis, M. Pedio and E. Stratakis
Abstract:
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal silicon carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behavior of laser-induced out-of-equilibrium carriers, a real-time simulation based on density-functional theory methodology is used to compute both the hot-carrier dynamics and transient change of the optical properties. A two-temperature model (TTM) is also employed to derive the relaxation processes (i.e., thermal equilibration between carrier and lattice through carrier-phonon coupling) for laser pulses of wavelength 401 nm, duration 50 fs at normal incidence irradiation which indicate that surface damage on the material occurs for fluence ∼1.88Jcm−2. This approach of linking real-time calculations, transient optical properties, and TTM modeling, has strong implications for understanding both the ultrafast dynamics and processes of energy relaxation between carrier and phonon subsystems and providing a precise investigation of the impact of hot-carrier population in surface damage mechanisms in solids.
Reference:
G. D. Tsibidis, L. Mouchliadis, M. Pedio and E. Stratakis, “Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses”, In Physical Review B, vol. 101, no. 7, pp. 075207, 2020.
Bibtex Entry:
@article{tsibidis_modeling_2020,
	title = {Modeling ultrafast out-of-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal silicon carbide with femtosecond laser pulses},
	volume = {101},
	url = {https://link.aps.org/doi/10.1103/PhysRevB.101.075207},
	doi = {10.1103/PhysRevB.101.075207},
	abstract = {We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal silicon carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behavior of laser-induced out-of-equilibrium carriers, a real-time simulation based on density-functional theory methodology is used to compute both the hot-carrier dynamics and transient change of the optical properties. A two-temperature model (TTM) is also employed to derive the relaxation processes (i.e., thermal equilibration between carrier and lattice through carrier-phonon coupling) for laser pulses of wavelength 401 nm, duration 50 fs at normal incidence irradiation which indicate that surface damage on the material occurs for fluence ∼1.88Jcm−2. This approach of linking real-time calculations, transient optical properties, and TTM modeling, has strong implications for understanding both the ultrafast dynamics and processes of energy relaxation between carrier and phonon subsystems and providing a precise investigation of the impact of hot-carrier population in surface damage mechanisms in solids.},
	number = {7},
	urldate = {2021-01-18},
	journal = {Physical Review B},
	author = {Tsibidis, G. D. and Mouchliadis, L. and Pedio, M. and Stratakis, E.},
	month = feb,
	year = {2020},
	note = {Publisher: American Physical Society},
	pages = {075207},
	file = {APS Snapshot:C:\Users\abm50\Zotero\storage\HV3W92YT\PhysRevB.101.html:text/html;Versión enviada:C:\Users\abm50\Zotero\storage\QUGYYQEQ\Tsibidis et al. - 2020 - Modeling ultrafast out-of-equilibrium carrier dyna.pdf:application/pdf}
}